arXiv · cond-mat/0209661
Multicomponent dense electron gas as a model of Si MOSFET
Abstract
We solve two-dimensional model of $N$-component dense electron gas in the limit of large $N$ and in a range of the Coulomb interaction parameter: $N^{-3/2}\ll r_s\ll 1$. The quasiparticle interaction on the Fermi circle vanishes as 1/N. The ground state energy and the effective mass are found as series in powers of $r_s^{2/3}$. In the quantum Hall state on the lowest Landau level at integer filling: $1\llν<N$, the charge activation energy gap and the exchange constant are found.
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S. V. Iordanski, A. Kashuba. 2002-09-29. Multicomponent dense electron gas as a model of Si MOSFET. https://doi.org/10.1134/1.1538290
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