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Origin of the efficient light emission from inversion domain boundaries in GaN

V. Fiorentini
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Abstract

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.

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V. Fiorentini. 2002-10-11. Origin of the efficient light emission from inversion domain boundaries in GaN. https://doi.org/10.1063/1.1554776

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