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Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors

A. Anaya·A. L. Korotkov·M. Bowman·J. Waddell·D. Davidovic
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Abstract

We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well-transmitting. We investigate the dependence of the Coulomb blockade on contact resistance. The high-resistance devices display Coulomb blockade and the low-resistance devices display a zero-bias conductance dip, both in quantitative agreement with theory. We find that in the intermediate regime, where the sample resistance is close to $h/e^2$, the I-V curve displays a Coulomb staircase with symmetric contact capacitances.

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A. Anaya, A. L. Korotkov, M. Bowman, J. Waddell, D. Davidovic. 2002-10-28. Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors. https://doi.org/10.1063/1.1554756

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