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Electrical detection of spin accumulation in a p-type GaAs quantum well

R. Mattana·J. -M. George·H. Jaffres·F. Nguyen Van Dau·A. Fert·B. Lepine·A. Guivarc'h·G. Jezequel
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Abstract

We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how the current, tunneling to a second $GaMnAs$ ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for the non-relaxed spin splitting of the chemical potential, that is spin accumulation, in the $GaAs$ well. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

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R. Mattana, J. -M. George, H. Jaffres, F. Nguyen Van Dau, A. Fert, B. Lepine, A. Guivarc'h, G. Jezequel. 2002-11-27. Electrical detection of spin accumulation in a p-type GaAs quantum well. https://doi.org/10.1103/physrevlett.90.166601

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