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All-optical single-electron read-out devices based on GaN quantum dots

Irene D'Amico·Fausto Rossi
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Abstract

We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model which allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to ``exact'' results. We apply our study to the design of an all-optical read-out device which exploits long-range dipole-monopole interactions and may be also used to monitor the charge status of a quantum dot system.

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Irene D'Amico, Fausto Rossi. 2002-11-21. All-optical single-electron read-out devices based on GaN quantum dots. https://doi.org/10.1063/1.1532546

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