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On Effective Electron Mass of Silicon MOSFET at Low Electron Density

V. T. Dolgopolov
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Abstract

The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the $g$ factor remains finite.

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V. T. Dolgopolov. 2002-11-21. On Effective Electron Mass of Silicon MOSFET at Low Electron Density. https://doi.org/10.1134/1.1525041

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