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Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

M. Kubisa·L. Bryja·K. Ryczko·J. Misiewicz·C. Bardot·M. Potemski·G. Ortner·M. Bayer·A. Forchel·C. B. Sorensen
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Abstract

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.

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M. Kubisa, L. Bryja, K. Ryczko, J. Misiewicz, C. Bardot, M. Potemski, G. Ortner, M. Bayer, A. Forchel, C. B. Sorensen. 2002-11-26. Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures. https://doi.org/10.1103/physrevb.67.035305

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