arXiv · cond-mat/0212460
Glass Transition in a Two-Dimensional Electron System in Silicon
Abstract
Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($\propto 1/f^α$) as $n_s$ is reduced below a certain density $n_g$, and a sharp jump of $α$ at $n_s\approx n_g$, are attributed to the freezing of the electron glass at $n_s = n_g$. The data strongly suggest that glassy dynamics persists in the metallic phase.
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Snezana Bogdanovich, Dragana Popovic. 2002-12-18. Glass Transition in a Two-Dimensional Electron System in Silicon. https://doi.org/10.1016/s1386-9477(01)00391-5
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