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Unconventional magnetoresistance in long InSb nanowires

S. V. Zaitsev-Zotov·Yu. A. Kumzerov·Yu. A. Firsov·P. Monceau
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Abstract

Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^α$, $I\propto V^β$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $α$, $β$ at H=10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.

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S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau. 2002-12-30. Unconventional magnetoresistance in long InSb nanowires. https://doi.org/10.1134/1.1567775

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