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High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

Guotai Tan·S. Dai·P. Duan·H. B. Lu·K. Xie·Y. L. Zhou·Z. H. Chen
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Abstract

The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic state of the thin film underwent a discontinuous variation between 350 K and 450 K, indicating that the metal-semiconductor transition was probably a discontinuous phase transition. At high temperature (450 to 1000 K), both the binding energies of the atomic core level and valence-band of the film shifted up with increasing the temperature, while their line-widths became narrower, which were different from that observed at low temperature. These phenomena are attributed to the crystal lattice expansion and related Jahn-Teller distortion varying with temperature.

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Guotai Tan, S. Dai, P. Duan, H. B. Lu, K. Xie, Y. L. Zhou, Z. H. Chen. 2003-01-21. High temperature electronic behavior of La0.8Sr0.2MnO3 thin film. https://arxiv.org/abs/cond-mat/0301385

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