arXiv · cond-mat/0302049
Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor
Abstract
We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.
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Jaeuk U. Kim, Ilya V. Krive, Jari M. Kinaret. 2003-03-31. Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor. https://doi.org/10.1103/physrevlett.90.176401
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