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Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

A. Rufenacht·P. Chappatte·S. Gariglio·Ch. Leemann·J. Fompeyrine·J. -P. Locquet·P. Martinoli
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Abstract

We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $λ_{ab}(0)$ = 535 nm.

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A. Rufenacht, P. Chappatte, S. Gariglio, Ch. Leemann, J. Fompeyrine, J. -P. Locquet, P. Martinoli. 2003-02-13. Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films. https://doi.org/10.1016/s0038-1101(03)00191-6

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