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Electron Spin-Relaxation Times of Phosphorus Donors in Silicon

A. M. Tyryshkin·S. A. Lyon·A. V. Astashkin·A. M. Raitsimring
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Abstract

Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach process with DeltaE = 126 K. The 2-pulse echo decay is exponential in 28Si:P, with the transverse relaxation (decoherence) time, T2, controlled by the Orbach process above ~12 K and by instantaneous diffusion at lower temperatures. Spin echo experiments with varying pulse turning angles show that the intrinsic T2 of an isolated spin in 28Si:P is ~60 ms at 7 K.

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A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin, A. M. Raitsimring. 2003-03-01. Electron Spin-Relaxation Times of Phosphorus Donors in Silicon. https://doi.org/10.1103/physrevb.68.193207

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