Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states

S. A. Mikhailov

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Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states

S. A. Mikhailov

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Abstract

We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift plasma instability, developing {\em near the edge} of the system under the microwave radiation. The proposed scheme qualitatively agrees with the microwave power, temperature, frequency, magnetic field, and mobility dependencies of the measured photosignal.

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S. A. Mikhailov. 2003-03-07. Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states. https://arxiv.org/abs/cond-mat/0303130

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