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A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields

H. Kempa·P. Esquinazi
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Abstract

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor based on graphite. A relatively thick layer of boron nitride turned out to be able to serve as a gate dielectric. This, however, limits the achievable electric gate field, which might be the reason for our observation of no charge-doping effect.

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H. Kempa, P. Esquinazi. 2003-04-04. A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields. https://arxiv.org/abs/cond-mat/0304105

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