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Gallium adsorption on (0001) GaN surfaces

C. Adelmann·J. Brault·G. Mula·B. Daudin·L. Lymperakis·J. Neugebauer
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Abstract

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.

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C. Adelmann, J. Brault, G. Mula, B. Daudin, L. Lymperakis, J. Neugebauer. 2003-04-07. Gallium adsorption on (0001) GaN surfaces. https://doi.org/10.1103/physrevb.67.165419

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