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Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

J. L. Nie·W. Xu·L. B. Lin
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Abstract

A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.

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J. L. Nie, W. Xu, L. B. Lin. 2003-04-11. Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields. https://doi.org/10.1142/s021797920301834x

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