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The spin-torque transistor

Gerrit E. W. Bauer·Arne Brataas·Yaroslav Tserkovnyak·Bart J. van Wees
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Abstract

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

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Gerrit E. W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Bart J. van Wees. 2003-04-24. The spin-torque transistor. https://doi.org/10.1063/1.1579122

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