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Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

A. Slobodskyy·C. Gould·T. Slobodskyy·C. R. Becker·G. Schmidt·L. W. Molenkamp
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Abstract

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

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A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, L. W. Molenkamp. 2003-05-07. Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode. https://doi.org/10.1103/physrevlett.90.246601

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