Temperature dependence of the conductivity of the electronic crystal

Abstract

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature, the electron transport is governed by thermal activation form of $σ_{xx}(T)\propto e^{-Δ_0/k_BT}$. The impurities will localize the electron states along the edges of the crystal domains. At sufficient low temperature, another transport mechanism called Mott's variable range hopping mechanism, similar to that in a disorder insulator takes effect. We show that as the temperature decreases, a crossover from the fixed range hopping of the transport to the variable range hopping of transport in the 2D electron system may be experimentally observed.