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On possible spin injection at non-ideal Schottky contacts

D. Korosak·B. Cvikl
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Abstract

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.

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D. Korosak, B. Cvikl. 2004-02-03. On possible spin injection at non-ideal Schottky contacts. https://doi.org/10.1016/j.ssc.2004.03.045

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