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Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation

R G Mani·J H Smet·K von Klitzing·V Narayanamurti·W B Johnson·V Umansky
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Abstract

Oscillations of the resistance observed under electromagnetic wave excitation in the high mobility GaAs/AlGaAs 2DES are examined as a function of the radiation frequency and the power, utilizing an empirical lineshape based on exponentially damped sinusoids. The fit-analysis indicates the resistance oscillation frequency, F, increases with the radiation frequency, n, at the rate dF/dn = 2.37 mTesla/GHz; the damping parameter, a, is approximately independent of n at constant power; and the amplitude, A, of the oscillations grows slowly with the incident power, at a constant temperature and frequency. The lineshape appears to provide a good description of the data.

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R G Mani, J H Smet, K von Klitzing, V Narayanamurti, W B Johnson, V Umansky. 2004-04-29. Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation. https://arxiv.org/abs/cond-mat/0305507

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