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Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

V. Podzorov·S. E. Sysoev·E. Loginova·V. M. Pudalov·M. E. Gershenson
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Abstract

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices.

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V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, M. E. Gershenson. 2003-06-07. Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs. https://doi.org/10.1063/1.1622799

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