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Structure and stability of the Si(105) surface

C. V. Ciobanu·V. B. Shenoy·C. Z. Wang·K. M. Ho
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Abstract

Recent experimental studies have shown that well-annealed, unstrained Si(105) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy (STM). We construct new models for the Si(105) surface that are based on single- and double-height steps separated by Si(001) terraces, and propose that the observed surface disorder of Si(105) originates from the presence of several structural models with different atomic-scale features but similar energies. This degeneracy can be removed by applying compressive strains, a result that is consistent with recent observations of the structure of the Ge/Si(105) surface.

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C. V. Ciobanu, V. B. Shenoy, C. Z. Wang, K. M. Ho. 2003-09-29. Structure and stability of the Si(105) surface. https://doi.org/10.1016/j.susc.2003.08.028

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