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Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation

V. I. Zubkov·M. A. Melnik·A. V. Solomonov·E. O. Tsvelev·F. Bugge·M. Weyers·G. Traenkle
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Abstract

The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimental data. For the conduction band offsets in strained In_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has been obtained.

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V. I. Zubkov, M. A. Melnik, A. V. Solomonov, E. O. Tsvelev, F. Bugge, M. Weyers, G. Traenkle. 2003-07-04. Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation. https://doi.org/10.1103/physrevb.70.075312

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