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Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers

M. B. Stone·K. C. Ku·S. J. Potashnik·B. L. Sheu·N. Samarth·P. Schiffer
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Abstract

We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of a capping layer only 10 monolayers thick completely suppresses the enhancement of the ferromagnetism associated with low temperature annealing. This result, which demonstrates that the surface of a Ga(1-x)Mn(x)As epilayer strongly affects the defect structure, has important implications for the incorporation of Ga(1-x)Mn(x)As into device heterostructures.

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M. B. Stone, K. C. Ku, S. J. Potashnik, B. L. Sheu, N. Samarth, P. Schiffer. 2003-07-10. Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers. https://doi.org/10.1063/1.1629376

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