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Gate-controllable spin-battery

Wen Long·Qing-feng Sun·Hong Guo·Jian Wang
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Abstract

We propose a gate-controllable spin-battery for spin current. The spin-battery consists of a lateral double quantum dot under a uniform magnetic field. A finite DC spin-current is driven out of the device by controlling a set of gate voltages. Spin-current can also be delivered in the absence of charge-current. The proposed device should be realizable using present technology at low temperature.

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Wen Long, Qing-feng Sun, Hong Guo, Jian Wang. 2003-07-11. Gate-controllable spin-battery. https://doi.org/10.1063/1.1603331

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