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Field-Effect Transistors on Tetracene Single Crystals

R. W. I. de Boer·T. M. Klapwijk·A. F. Morpurgo
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Abstract

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.

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R. W. I. de Boer, T. M. Klapwijk, A. F. Morpurgo. 2003-10-08. Field-Effect Transistors on Tetracene Single Crystals. https://doi.org/10.1063/1.1629144

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