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Intrinsic hole localization mechanism in magnetic semiconductors

H. Raebiger·A. Ayuela·R. M. Nieminen
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Abstract

The interplay between clustering and exchange coupling in magnetic semiconductors for the prototype (Ga_{1-x},Mn_x)As with manganese concentrations x of 1/16 and 1/32 in the interesting experimental range is investigated. For x ~ 6 %, when all possible arrangements of two atoms within a large supercell are considered, the clustering of Mn atoms at nearest-neighbour Ga sites is energetically preferred. As shown by spin density analysis, this minimum energy configuration localizes further one hole and reduces the effective charge carrier concentration. Also the exchange coupling constant increases to a value corresponding to lower Mn concentrations with decreasing inter Mn distance.

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H. Raebiger, A. Ayuela, R. M. Nieminen. 2004-09-13. Intrinsic hole localization mechanism in magnetic semiconductors. https://doi.org/10.1088/0953-8984%2F16%2F41%2Fl05

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