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The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

I. Kuryliszyn-Kudelska·J. Z. Domagala·T. Wojtowicz·X. Liu·E. Lusakowska·W. Dobrowolski·J. K. Furdyna
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Abstract

Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers

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I. Kuryliszyn-Kudelska, J. Z. Domagala, T. Wojtowicz, X. Liu, E. Lusakowska, W. Dobrowolski, J. K. Furdyna. 2003-07-18. The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As. https://doi.org/10.1063/1.1634390

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