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Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot

C. Fuhner·U. F. Keyser·R. J. Haug·D. Reuter·A. D. Wieck
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Abstract

We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and V_{SD} dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.

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C. Fuhner, U. F. Keyser, R. J. Haug, D. Reuter, A. D. Wieck. 2003-07-23. Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot. https://arxiv.org/abs/cond-mat/0307590

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