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Spin extraction from a non-magnetic semiconductor

A. M. Bratkovsky·V. V. Osipov
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Abstract

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current.

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A. M. Bratkovsky, V. V. Osipov. 2003-10-10. Spin extraction from a non-magnetic semiconductor. https://arxiv.org/abs/cond-mat/0307656

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