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Realistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors

Sameer Sapra·N. Shanthi·D. D. Sarma
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Abstract

We analyze the electronic structure of group II-VI semiconductors obtained within LMTO approach in order to arrive at a realistic and minimal tight binding model, parameterized to provide an accurate description of both valence and conduction bands. It is shown that a nearest-neighbor $sp^3d^5$ model is fairly sufficient to describe to a large extent the electronic structure of these systems over a wide energy range, obviating the use of any fictitious $s^*$ orbital. The obtained hopping parameters obey the universal scaling law proposed by Harrison, ensuring transferability to other systems. Furthermore, we show that certain subtle features in the bonding of these compounds require the inclusion of anion-anion interactions in addition to the nearest-neighbor cation-anion interactions.

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Sameer Sapra, N. Shanthi, D. D. Sarma. 2003-08-04. Realistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors. https://doi.org/10.1103/physrevb.66.205202

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