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Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Y. D. Park·J. D. Lim·K. S. Suh·S. B. Shim·J. S. Lee·C. R. Abernathy·S. J. Pearton·Y. S. Kim·Z. G. Khim·R. G. Wilson
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Abstract

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.

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Y. D. Park, J. D. Lim, K. S. Suh, S. B. Shim, J. S. Lee, C. R. Abernathy, S. J. Pearton, Y. S. Kim, Z. G. Khim, R. G. Wilson. 2003-08-11. Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C. https://doi.org/10.1103/physrevb.68.085210

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