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Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

M. Grayson·D. Schuh·M. Bichler·G. Abstreiter·L. Hoeppel·J. Smet·K. von Klitzing
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Abstract

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.

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M. Grayson, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. von Klitzing. 2003-10-13. Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees. https://doi.org/10.1016/j.physe.2003.11.245

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