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Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

M. Grayson·D. Schuh·M. Huber·M. Bichler·G. Abstreiter
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Abstract

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.

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M. Grayson, D. Schuh, M. Huber, M. Bichler, G. Abstreiter. 2004-11-11. Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees. https://doi.org/10.1063/1.1851010

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