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Resonance Kondo Tunneling through a Double Quantum Dot at Finite Bias

M. N. Kiselev·K. Kikoin·L. W. Molenkamp
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Abstract

It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD described by SO(4) symmetry. We analyze the decoherence effects associated with the triplet/singlet relaxation in DQD and discuss the shape of differential conductance line as a function of dc-bias and temperature.

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M. N. Kiselev, K. Kikoin, L. W. Molenkamp. 2003-08-29. Resonance Kondo Tunneling through a Double Quantum Dot at Finite Bias. https://doi.org/10.1103/physrevb.68.155323

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