The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

P. Kinsler; W. Th. Wenckebach

doi:10.1063/1.1622994

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The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

P. Kinsler·W. Th. Wenckebach

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Abstract

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).

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P. Kinsler, W. Th. Wenckebach. 2014-08-01. The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$. https://doi.org/10.1063/1.1622994

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