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Gate-induced ionization of single dopant atoms

G. D. J. Smit·S. Rogge·J. Caro·T. M. Klapwijk
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Abstract

Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field ionization. The dopant is modelled as a hydrogen-like impurity and the Schrodinger equation is solved by a variational method. We find that--depending on the separation of the dopant and the gate--the electron transfer is either gradual or abrupt, defining two distinctive regimes for the gate-induced ionization process.

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G. D. J. Smit, S. Rogge, J. Caro, T. M. Klapwijk. 2003-09-05. Gate-induced ionization of single dopant atoms. https://doi.org/10.1103/physrevb.68.193302

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