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Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state

G. D. J. Smit·S. Rogge·J. Caro·T. M. Klapwijk
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Abstract

A boron impurity in silicon binding an extra hole is known to have only one bound state at an energy of just below 2 meV. The nature of the Si:B^+ ground state is however not well established. We qualitatively analyze the behavior in a magnetic field of isolated acceptors in a tetrahedral lattice binding two holes using group theory. Applying these results, we analyze recent measurements and conclude that the ground state of B^+ is most compatible with a non-degenerate Gamma_1 state.

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G. D. J. Smit, S. Rogge, J. Caro, T. M. Klapwijk. 2003-09-05. Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state. https://doi.org/10.1103/physrevb.69.085211

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