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Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics

G. D. J. Smit·S. Rogge·J. Caro·T. M. Klapwijk
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Abstract

We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter in the device-to-device conductance towards smaller device sizes. The low-temperature measurements exhibit pronounced features, caused by resonant tunneling through electronic states of individual dopant atoms. We demonstrate by a statistical analysis that this behavior can be explained by the presence of randomly distributed individual dopant atoms in the space charge region.

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G. D. J. Smit, S. Rogge, J. Caro, T. M. Klapwijk. 2003-09-05. Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics. https://doi.org/10.1103/physrevb.69.035338

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