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Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier

J. Caro·I. D. Vink·G. D. J. Smit·S. Rogge·T. M. Klapwijk
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Abstract

We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the emitter Fermi level in our devices is a field-independent reference energy, we are able to directly observe the diamagnetic shift of the B^+ level. This is contrary to the situation in magneto-optical spectroscopy, where the shift is absorbed in the measured ionization energy.

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J. Caro, I. D. Vink, G. D. J. Smit, S. Rogge, T. M. Klapwijk. 2003-09-05. Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier. https://doi.org/10.1103/physrevb.69.125324

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