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Intrinsically coupled stripes within the CuO2 planes of high-Tc materials

W. Winkler
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Abstract

Analysis of the electronic state of the CuO2 planes of high-Tc materials has been performed with special regard to the influence of the Coulomb interactions separated after moments. Different symmetry breaking effects were revealed. A commensurate charge and bonding fluctuation state (CBF) with the period (2a,2b) is established which exists collinearly with the antiferromagnetic spin state. The CBF state and the antiferromagnetic spin state are result of the same electronic renormalizations. The existence of localized topological hole states under hole doping is established. As a consequence of this local symmetry is broken. A quadrupolar-polarization induced attractive hole-hole interaction can exist between such topological hole states. This interaction creates an ordered topological hole structure which leads to a global symmetry breaking. The ordered topological hole structure (b-holes) can be characterized as parallel one-dimensional electronic states (stripes) along particular ..Cu-O-Cu.. bonding directions being intrinsically coupled to each other. The b-hole state exists undisturbed for hole concentrations n in the range of 0.125 <= n <= 0.25 holes/copper. In addition to b-holes, holes which are not intrinsically bonded exist (f-holes) for hole concentrations of n > 0.125 holes/copper. The inevitable consequence is an electronic two fluid behaviour (b-holes, f-holes) within the range of 0.125 < n <= 0.25 holes/copper. A comparison with experimental results is given with particular respect to mySR, neutron scattering (1/8 problem), Hall-effect anomalies and scanning tunneling microscopy (STM).

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W. Winkler. 2003-09-15. Intrinsically coupled stripes within the CuO2 planes of high-Tc materials. https://arxiv.org/abs/cond-mat/0309357

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