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Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

V. T. Dolgopolov·E. V. Deviatov·A. A. Shashkin·U. Wieser·U. Kunze·G. Abstreiter·K. Brunner
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Abstract

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

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V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin, U. Wieser, U. Kunze, G. Abstreiter, K. Brunner. 2003-10-06. Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well. https://doi.org/10.1016/j.spmi.2004.02.003

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