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Deposition of Cu2Ta4O12 by pulsed laser deposition

A. Heinrich·B. Renner·R. Lux·S. G. Ebbinghaus·A. Reller·B. Stritzker
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Abstract

Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.

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A. Heinrich, B. Renner, R. Lux, S. G. Ebbinghaus, A. Reller, B. Stritzker. 2003-10-07. Deposition of Cu2Ta4O12 by pulsed laser deposition. https://arxiv.org/abs/cond-mat/0310155

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