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Conditions and possible mechanism of condensation of e-h pairs in bulk GaAs at room temperature

Peter Vasil'ev
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Abstract

A mechanism of the condensation of e-h pairs in bulk GaAs at room temperature, which has been observed earlier, is proposed. The point is that the photon assisted pairing happens in a system of electrons and holes that occupy energy levels at the very bottoms of the bands. Due to a very high e-h density, the destruction of the pairs and loss of coherency does not occur because almost all energy levels inside a 30-60 meV band from the bottom of the conduction band prove to be occupied. As a result, a coherent ensemble of composite bosons (paired electrons and holes) with the minimum possible energy appears. The lifetime of this strongly non-equilibrium coherent e-h BCS-like state is as short as a few hundred of femtoseconds

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Peter Vasil'ev. 2003-10-15. Conditions and possible mechanism of condensation of e-h pairs in bulk GaAs at room temperature. https://doi.org/10.1002/pssb.200301989

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