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New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H

J. P. R. Bakker·P. J. S. van Capel·B. V. Fine·J. I. Dijkhuis
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Abstract

We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had p-i-p structure with all three layers hydrogenated. The experimental spectra were found to be in a very good quantitative agreement with theoretical predictions, which were based on the mechanism involving long-range fluctuations of the Coulomb potential created by charged defects (see cond-mat/0210680).

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J. P. R. Bakker, P. J. S. van Capel, B. V. Fine, J. I. Dijkhuis. 2003-10-20. New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H. https://doi.org/10.1016/j.jnoncrysol.2004.02.092

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