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Hall effect in cobalt-doped TiO$_{2-δ}$

J. S. Higgins·S. R. Shinde·S. B. Ogale·T. Venkatesan·R. L. Greene
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Abstract

We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-δ}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO$_{2}$ to Ti$_[n}$O$_{2n-1}$ Magneli phase(s).

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J. S. Higgins, S. R. Shinde, S. B. Ogale, T. Venkatesan, R. L. Greene. 2003-11-03. Hall effect in cobalt-doped TiO$_{2-δ}$. https://doi.org/10.1103/physrevb.69.073201

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