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New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors

Frank Fischer·Matthew Grayson·Erwin Schuberth·Dieter Schuh·Max Bichler·Gerhard Abstreiter
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Abstract

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.

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Frank Fischer, Matthew Grayson, Erwin Schuberth, Dieter Schuh, Max Bichler, Gerhard Abstreiter. 2003-12-11. New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors. https://doi.org/10.1016/j.physe.2003.11.227

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