Renormalization of resonant tunneling in MOSFETs

D. Mozyrsky; I. Martin; A. Shnirman; M. B. Hastings

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arXiv · cond-mat/0312503

Renormalization of resonant tunneling in MOSFETs

D. Mozyrsky·I. Martin·A. Shnirman·M. B. Hastings

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Abstract

We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons. We argue that our results can explain the large tunneling timescales observed in experiments on random telegraph signals in ${\rm Si}$ metal-oxide-semiconductor field effect transistors.

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D. Mozyrsky, I. Martin, A. Shnirman, M. B. Hastings. 2003-12-18. Renormalization of resonant tunneling in MOSFETs. https://arxiv.org/abs/cond-mat/0312503

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